Samsung Electronics Begins Industry's First Mass Production of 9th-Gen V-NAND
April 23 2024 - 4:43AM
Business Wire
Industry-leading bit density with about 50%
increase compared to previous generation
Productivity for the V-NAND’s groundbreaking
double-stack structure enhanced through advanced ‘channel hole
etching’ technology
Samsung Electronics Co., Ltd., the world leader in advanced
memory technology, today announced that it has begun mass
production for its one-terabit (Tb) triple-level cell (TLC)
9th-generation vertical NAND (V-NAND), solidifying its leadership
in the NAND flash market.
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Samsung Electronics Begins Industry’s
First Mass Production of 9th-Gen V-NAND (Photo: Business Wire)
“We are excited to deliver the industry’s first 9th-gen V-NAND,
which will bring future applications leaps forward. In order to
address the evolving needs for NAND flash solutions, Samsung has
pushed the boundaries in cell architecture and operational scheme
for our next-generation product,” said SungHoi Hur, Head of Flash
Product & Technology of the Memory Business at Samsung
Electronics. “Through our latest V-NAND, Samsung will continue to
set the trend for the high-performance, high-density solid state
drive (SSD) market that meets the needs for the coming AI
generation.”
With the industry's smallest cell size and thinnest mold,
Samsung improved the bit density of the 9th-generation V-NAND by
about 50% compared to the 8th-generation V-NAND. New innovations
such as cell interference avoidance and cell life extension have
been applied to enhance product quality and reliability, while
eliminating dummy channel holes has significantly reduced the
planar area of the memory cells.
In addition, Samsung’s advanced "channel hole etching"
technology showcases the company’s leadership in process
capabilities. This technology creates electron pathways by stacking
mold layers and maximizes fabrication productivity as it enables
simultaneous drilling of the industry's highest cell layer count in
a double-stack structure. As the number of cell layers increase,
the ability to pierce through higher cell numbers becomes
essential, demanding more sophisticated etching techniques.
The 9th-generation V-NAND is equipped with the next-generation
NAND flash interface, "Toggle 5.1," which supports increased data
input/output speeds by 33% to up to 3.2 gigabits-per-second (Gbps).
Along with this new interface, Samsung plans to solidify its
position within the high-performance SSD market by expanding
support for PCIe 5.0.
Power consumption has also been improved by 10% with
advancements in low-power design, compared to the previous
generation. As reducing energy usage and carbon emissions become
vital for customers, Samsung's 9th-generation V-NAND is expected to
be an optimal solution for future applications.
Samsung has started mass production for the 1Tb TLC
9th-generation V-NAND this month, followed by the quad level cell
(QLC) model in the second half of this year.
About Samsung Electronics Co.,
Ltd.
Samsung inspires the world and shapes the future with
transformative ideas and technologies. The company is redefining
the worlds of TVs, smartphones, wearable devices, tablets, home
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Ujeong Jahnke Samsung Semiconductor Europe GmbH Tel.
+49(0)89-45578-1000 Email: sseg.comm@samsung.com